This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRFR5305PBF +BOM

DPAK 3-Pin 55V 31A P-Channel MOSFET Infineon IRFR5305PBF

Manufacturer:

Infineon
Mfr.Part #:

IRFR5305PBF
Datasheet:

IRFR5305PBF Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel

IRFR5305PBF General Description

The IRFR5305PBF is a high-performance Power Field-Effect Transistor designed for various applications that require efficient power management. With a current rating of 31A and a voltage rating of 55V, this P-Channel Silicon MOSFET offers low on-resistance of 0.065ohm, ensuring minimal power loss during operation

Key Features

Enhanced surge current handling
High reliability rating
Minimal distortion effect

Application

Wireless sensor networks
IoT devices
Home automation systems

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	28 A	Rds On - Drain-Source Resistance	65 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Qg - Gate Charge	42 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	89 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	63 ns
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	66 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	HEXFET Power MOSFET
Typical Turn-Off Delay Time	39 ns	Typical Turn-On Delay Time	14 ns
Width	6.22 mm	Part # Aliases	SP001571570
Unit Weight	0.011640 oz