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See Technical Specifications

IRFS4310PBF +BOM

IRFS4310PBF is a power MOSFET designed for high current applications, featuring N-channel operation and a 100V voltage rating

Manufacturer:

International Rectifier
Mfr.Part #:

IRFS4310PBF
Datasheet:

IRFS4310PBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

130A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRFS4310PBF

IRFS4310PBF General Description

The IRFS4310PBF from Infineon Technologies is a top-of-the-line power MOSFET transistor perfect for applications requiring high efficiency and minimal power dissipation. With a robust design and advanced silicon technology, this MOSFET offers outstanding performance and durability even in the toughest operating conditions. Its 100V drain-source voltage rating, 120A continuous drain current, and low on-resistance of 3.5mΩ make it an ideal choice for demanding applications like motor control, power supplies, and inverters. The TO-263 package ensures easy assembly onto circuit boards, while its compact size and effective heat dissipation capabilities ensure a long operational lifespan

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	250 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	7670 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount