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See Technical Specifications

IRFS4321PBF +BOM

D2PAK tube housing a high-power N-channel MOSFET transistor capable of handling up to 150V and 85A

Manufacturer:

International Rectifier
Mfr.Part #:

IRFS4321PBF
Datasheet:

IRFS4321PBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

120 mJ
EDA/CAD Models:

Request Free CAD Models for IRFS4321PBF

IRFS4321PBF General Description

This N-channel MOSFET is constructed with silicon, a material known for its reliability and performance in electronic components. The metal-oxide semiconductor structure further enhances its functionality, allowing for high-speed switching and precise control over current flow

Specifications

Source Content uid	IRFS4321PBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	120 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	75 A	Drain-source On Resistance-Max	0.015 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	330 W
Pulsed Drain Current-Max (IDM)	330 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON