This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRG4PH50UDPBF +BOM

Chip Transistor with Negative Channel for IGBT

Manufacturer:

International Rectifier
Mfr.Part #:

IRG4PH50UDPBF
Datasheet:

IRG4PH50UDPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Date Of Intro:

1997-03-27
EDA/CAD Models:

Request Free CAD Models for IRG4PH50UDPBF

IRG4PH50UDPBF General Description

Designed for high-power applications, the IRG4PH50UDPBF IGBT offers a balance of performance and efficiency. The 1200V breakdown voltage provides reliable protection against voltage fluctuations, while the low saturation voltage of 2.56V minimizes power losses during operation. The fast current release time of 180ns allows for quick response times, making it suitable for applications that require rapid switching. With a power dissipation capability of 200W, this IGBT can handle demanding loads while maintaining stable performance

Key Features

UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching,>200 kHz in resonant mode
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package
Lead-Free
Benefits
Higher switching frequency capability than competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require
less/no snubbing

Specifications

Source Content uid	IRG4PH50UDPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Date Of Intro	1997-03-27	Additional Feature	ULTRA FAST
Case Connection	COLLECTOR	Collector Current-Max (IC)	45 A
Collector-Emitter Voltage-Max	1200 V	Configuration	SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code	TO-247AC	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Polarity/Channel Type	N-CHANNEL
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	570 ns
Turn-on Time-Nom (ton)	73 ns