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IRL100HS121 +BOM

N-MOSFET transistor with a unipolar configuration, rated at 100V and 7.8A, with a power dissipation of 5.8W in a PQFN2X2 package

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL100HS121
Datasheet:

IRL100HS121 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

11A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRL100HS121

IRL100HS121 General Description

Infineon's commitment to innovation and excellence is evident in the design and functionality of the IRL100HS121 logic level power MOSFETs. By combining advanced features with a versatile package, these MOSFETs are poised to set new standards in efficiency, performance, and reliability for wireless charging, telecom, and adapter applications. Get ahead of the competition and invest in the future of semiconductor technology with the IRL100HS121

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	42mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id	2.3V @ 10µA	Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 50 V
Power Dissipation (Max)	11.5W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IRL100