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See Technical Specifications

IRL1404ZS +BOM

Robust and Reliable Solution for Electric Vehicle Syste

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL1404ZS
Datasheet:

IRL1404ZS Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Models:

Request Free CAD Models for IRL1404ZS

IRL1404ZS General Description

Moreover, the IRL1404ZS boasts a high avalanche energy rating, ensuring durability and reliability in even the harshest operating conditions. Whether you're working on high-power electronics or demanding applications that require fast response times, the IRL1404ZS is a top-notch choice for optimal performance. Upgrade your circuits with the IRL1404ZS and experience the power of efficient, reliable MOSFET technology

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.1mOhm @ 75A, 10V	Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5080 pF @ 25 V	Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount