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Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R
TO-263-3,D2PAK(2Leads+Tab),TO-263ABManufacturer:
Infineon Technologies
Mfr.Part #:
IRL3103S
Datasheet:
Series:
HEXFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
30 V
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In terms of control, the IRL3103S offers precise manipulation of its switching characteristics, featuring a gate-source voltage of +/- 20 volts and a gate charge of 24 nanocoulombs. Its rapid switching speed, with a rise time of 3.1 nanoseconds and a fall time of 6 nanoseconds, further enhances its performance in demanding applications
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V | Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V | Power Dissipation (Max) | 94W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
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