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See Technical Specifications

IRL3705Z +BOM

TO-220AB Plastic Package-3

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL3705Z
Datasheet:

IRL3705Z Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRL3705Z

IRL3705Z General Description

The IRL3705Z is a formidable member of the StrongIRFET™ power MOSFET family, boasting low RDS(on) and an impressive capacity for high current. This makes it the perfect choice for applications that demand both performance and durability at lower frequencies. Whether you're working with DC motors, battery management systems, inverters, or DC-DC converters, this versatile device has you covered

Key Features

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 52A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	2880 pF @ 25 V	Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole