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See Technical Specifications

IRL3705ZPBF +BOM

55V high voltage MOSFET

Manufacturer:

International Rectifier
Mfr.Part #:

IRL3705ZPBF
Datasheet:

IRL3705ZPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRL3705ZPBF

IRL3705ZPBF General Description

The IRL3705ZPBF is a powerful N-Channel silicon field-effect transistor with a maximum current rating of 75A and a voltage rating of 55V. With a low on-resistance of 0.008ohm, this transistor is ideal for high-performance applications requiring efficient power switching. It features a TO-220AB plastic package with lead-free construction, making it environmentally friendly and easy to integrate into various circuit designs

Key Features

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Application

SWITCHING

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 52A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	2880 pF @ 25 V	Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole