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See Technical Specifications

IRL3716 +BOM

20V 180A Power Transistor

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL3716
Datasheet:

IRL3716 Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

Request Free CAD Models for IRL3716

IRL3716 General Description

Boasting a drain-source voltage rating of 20V and a continuous drain current rating of 19A, the IRL3716 N-channel power MOSFET transistor is a powerhouse in power switching applications. Its on-state resistance (RDS(on)) of typically 9.5 mΩ at a VGS of 4.5V underscores its suitability for high-current applications where low conduction losses are essential. Housed in a TO-220 package, this transistor offers superior thermal performance and easy mounting to a heat sink, allowing for efficient heat dissipation even under high load conditions. Notably, the IRL3716 stands out with its low gate charge, enabling fast switching speeds and minimizing switching losses. These features make it an excellent choice for high-frequency switching applications, where speed and efficiency are paramount

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4mOhm @ 90A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 4.5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5090 pF @ 10 V	Power Dissipation (Max)	210W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole