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IRL510A +BOM

Rail-mountable TO-220 MOSFET, featuring N-channel design, capable of handling up to 100 volts and 5.6 amps

Manufacturer:

onsemi
Mfr.Part #:

IRL510A
Datasheet:

IRL510A Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

5.6A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRL510A

IRL510A General Description

Moreover, the IRL510A is easy to interface with other electronic components, thanks to its gate threshold voltage of typically 2 volts. This makes it a breeze to connect to microcontrollers and logic circuits, expanding its usability in various projects. Its fast switching speed further enhances its functionality, making it a valuable asset in applications that require rapid switching of loads. The IRL510A is truly a versatile and high-performance transistor that is sure to meet the demands of your next electronics project

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V	Rds On (Max) @ Id, Vgs	440mOhm @ 2.8A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	8 nC @ 5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 25 V
Power Dissipation (Max)	37W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	IRL51