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See Technical Specifications

IRL530PBF +BOM

Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3

Manufacturer:

Vishay Siliconix
Mfr.Part #:

IRL530PBF
Datasheet:

IRL530PBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

15A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRL530PBF

IRL530PBF General Description

The TO-220 packaging provides a robust and reliable housing for the transistor, making it suitable for a wide range of industrial and electronic applications. With a power dissipation rating that exceeds industry standards, the IRL530PBF is a versatile and dependable component for your circuit design needs

Key Features

Rapid cycle rated
Eigenstate isolation
Synchronous switching

Application

Industrial

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V	Rds On (Max) @ Id, Vgs	160mOhm @ 9A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	28 nC @ 5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	930 pF @ 25 V
Power Dissipation (Max)	88W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	IRL530