Payment Method
IRL630PBF +BOM
MOSFET LOGIC MOSFET N-CHANNEL 200V
TO-220-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
IRL630PBF
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
200 V
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Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
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EDA/CAD Models:
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Availability: 7414 PCS
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IRL630PBF General Description
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Key Features
- Compact thermal design
- Silicon robustness tested
- Short-circuit protection integrated
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V | Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
Vgs (Max) | ±10V | Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
Power Dissipation (Max) | 74W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | IRL630 |
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In Stock: 7,414
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.424 | $1.42 |
10+ | $1.207 | $12.07 |
50+ | $0.999 | $49.95 |
100+ | $0.865 | $86.50 |
500+ | $0.805 | $402.50 |
1000+ | $0.779 | $779.00 |
The prices below are for reference only.
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