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See Technical Specifications

IRLB8314PBF +BOM

Power MOSFET in N-Channel configuration, enclosed in a TO-220AB package, rated for 30 volts and 171 amps

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLB8314PBF
Datasheet:

IRLB8314PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRLB8314PBF

IRLB8314PBF General Description

Built for versatility, the IRLB8314PBF power MOSFET is engineered to excel in a multitude of applications, including motor control, power supplies, and solar inverters. Its high current rating and low on-state resistance make it a top choice for applications that require maximum efficiency and reliability. The MOSFET's TO-220 package allows for easy mounting on printed circuit boards, while its standard pinout configuration ensures compatibility with existing circuit layouts and designs. Its outstanding performance and robust features make it an indispensable component for high-power switching circuits

Application

SWITCHING

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	171A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 68A, 10V	Vgs(th) (Max) @ Id	2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 4.5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5050 pF @ 15 V	Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRLB8314