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IRLBA3803P +BOM

30V N-Channel MOSFET with a power dissipation of 270W in Through Hole SUPER-220™ (TO-273AA) package

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLBA3803P
Datasheet:

IRLBA3803P Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRLBA3803P

IRLBA3803P General Description

The IRLBA3803P power MOSFET transistor is a high-performance component designed to meet the demands of high current applications. With its maximum drain-source voltage of 30V and continuous drain current of 140A, this transistor is versatile and reliable for a wide range of industrial and automotive uses. Its low on-resistance of 2.1mΩ is a standout feature that enhances power efficiency and reduces energy loss in circuits, ultimately leading to improved performance

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	179A (Tc)	Rds On (Max) @ Id, Vgs	5mOhm @ 71A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 25 V	Power Dissipation (Max)	270W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole