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IRLH5030TRPBF +BOM
HEXFET MOSFET featuring N-channel design, 100V voltage rating, 9mOhms resistance, and 44nC gate charge
8-PowerVDFN-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IRLH5030TRPBF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Models:
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IRLH5030TRPBF General Description
N-Channel 100 V 13A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Specifications
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V | Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 5185 pF @ 50 V | Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IRLH5030 |
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