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IRLI530N +BOM

N-Channel Silicon FET

IRLI530N General Description

N-Channel 100 V 12A (Tc) 41W (Tc) Through Hole PG-TO220-FP

Key Features

  • ♦ Avalanche Rugged Technology
  • ♦ Rugged Gate Oxide Technology
  • ♦ Lower Input Capacitance
  • ♦ Improved Gate Charge
  • ♦ Extended Safe Operating Area
  • ♦ 175°C Operating Temperature
  • ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V
  • ♦ Lower RDS(ON): 0. 101Ω (Typ.)

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole

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