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IRLI540N +BOM

IRLI540N 20A 100V MOSFET

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLI540N
Datasheet:

IRLI540N Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IRLI540N

IRLI540N General Description

The IRLI540N power MOSFET transistor offers unparalleled versatility and durability, making it an indispensable component in the electronics industry. Its rugged design and impressive specifications, such as a 100V drain-source voltage rating and 33A continuous drain current, ensure optimal performance in power supplies, motor controls, and lighting systems. With a gate threshold voltage of 2V and a low on-resistance of 44mΩ, this transistor provides efficient control and operation, earning it a reputation as a top choice for high-power and high-efficiency applications. Its popularity among electronics designers and engineers is a testament to its exceptional performance and reliability

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	44mOhm @ 12A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V	Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole