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IRLIB4343 +BOM
Through-Hole TO-220AB Full-Pak N-Channel Transistor, 55V, 19A
TO-220-3FullPack-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IRLIB4343
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
55 V
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EDA/CAD Models:
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Availability: 8245 PCS
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IRLIB4343 General Description
N-Channel 55 V 19A (Tc) 39W (Tc) Through Hole TO-220AB Full-Pak
Specifications
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 50 V | Power Dissipation (Max) | 39W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Through Hole |
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In Stock: 8,245
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