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See Technical Specifications

IRLL024NPBF +BOM

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLL024NPBF
Datasheet:

IRLL024NPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRLL024NPBF

IRLL024NPBF General Description

From power supplies to motor drives, the IRLL024NPBF is a versatile and efficient solution for your electronic design needs. Its advanced features and high-quality construction make it a reliable choice for demanding applications that require precision and performance. Upgrade your projects with the IRLL024NPBF and experience the benefits of superior power management and control

Key Features

Halogen-free According to IEC 61249-2-21 Definition
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Logic-Level Gate Drive
RDS(on) Specified at VGS = 4 V and 5 V
Fast Switching
Ease of Paralleling
Compliant to RoHS Directive 2002/95/EC

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.6 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V	Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount