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See Technical Specifications

IRLL024ZTRPBF +BOM

N-channel Silicon Transistor MOSFET with 55V voltage rating and 5A current rating

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLL024ZTRPBF
Datasheet:

IRLL024ZTRPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRLL024ZTRPBF

IRLL024ZTRPBF General Description

The StrongIRFET™ power MOSFET family sets the standard for high performance and reliability in low frequency applications. With a focus on minimizing RDS(on) and maximizing current capability, these devices are built to handle even the most demanding power requirements. Whether you're designing a DC motor control system, a battery management solution, or a high-efficiency inverter, the StrongIRFET™ family has you covered

Key Features

Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Logic-Level Gate Drive
RDS(on) Specified at VGS = 4 V and 5 V
Fast Switching
Ease of Paralleling
Lead (Pb)-free Available

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	60mOhm @ 3A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 25 V	Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRLL024