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IRLMS5703TRPBF +BOM

High Quality and Reliable INFINEON MOSFET Transistor

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLMS5703TRPBF
Datasheet:

IRLMS5703TRPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRLMS5703TRPBF

IRLMS5703TRPBF General Description

Infineon Technologies has crafted the IRLMS5703TRPBF MOSFET with precision engineering to deliver a compact and surface-mountable solution for power management circuits. Its TO-236AB package ensures easy integration into electronic assemblies, while its wide temperature range of -55°C to 150°C guarantees reliable operation in diverse environmental conditions. Designers can trust in the performance and durability of this MOSFET for various applications requiring high-power capabilities and efficient power management

Specifications

Series	HEXFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 1.6A, 10V	Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V	Power Dissipation (Max)	1.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount