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IRLMS6702TRPBF +BOM

Infineon IRLMS6702TRPBF is a premium P-channel MOSFET model, offering a current rating of 2

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLMS6702TRPBF
Datasheet:

IRLMS6702TRPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

Request Free CAD Models for IRLMS6702TRPBF

IRLMS6702TRPBF General Description

The IRLMS6702TRPBF is a premium P-Channel MOSFET that offers a range of benefits for users in need of a high-quality component. Its RoHS compliance reflects a commitment to sustainability, while its low RDS(on) and industry-leading quality ensure optimal performance in a variety of applications. With features like a dynamic dv/dt rating and fast switching capabilities, this MOSFET is designed to deliver reliable and efficient operation. Its fully avalanche rated design and ability to operate at temperatures up to 175C make it a versatile choice for applications such as DC switches and load switches. Trust the IRLMS6702TRPBF to meet your switching needs with precision and dependability

Specifications

Series	HEXFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	200mOhm @ 1.6A, 4.5V	Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	8.8 nC @ 4.5 V	Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 15 V	Power Dissipation (Max)	1.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRLMS6702