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See Technical Specifications

IRLMS6802 +BOM

P-Channel Power Field-Effect Transistor

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLMS6802
Datasheet:

IRLMS6802 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

5.6A (Ta)
EDA/CAD Models:

Request Free CAD Models for IRLMS6802

IRLMS6802 General Description

With a legacy of proven silicon processes at its core, the IRLMS6802 MOSFETs are built to deliver reliable performance and efficiency. Whether you're working on industrial machinery, consumer electronics, or automotive applications, these devices offer the power and precision required to meet your project requirements. Battery-powered applications also benefit from the energy-efficient design of these MOSFETs, ensuring longer operating times and improved overall performance

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Rds On (Max) @ Id, Vgs	50mOhm @ 5.1A, 4.5V	Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 5 V	Input Capacitance (Ciss) (Max) @ Vds	1079 pF @ 10 V
Mounting Type	Surface Mount