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See Technical Specifications

IRLR024NPBF +BOM

Maximum voltage rating: 55 V

Manufacturer:

International Rectifier
Mfr.Part #:

IRLR024NPBF
Datasheet:

IRLR024NPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
EDA/CAD Models:

Request Free CAD Models for IRLR024NPBF

IRLR024NPBF General Description

The IRLR024NPBF is an exceptional N-channel MOSFET designed for high current applications, where power management and motor control are crucial. With a drain-source voltage rating of 60 volts and a continuous drain current of 17 amperes, this MOSFET is well-suited for medium to high power applications. Its low on-resistance of 0.045 ohms, gate threshold voltage of 1.0 volts, fast switching speed, and low gate charge make it an efficient choice for switching applications. The DPAK (TO-252) package type ensures good thermal performance and ease of mounting, while its RoHS compliance reflects its adherence to the latest environmental standards

Specifications

Source Content uid	IRLR024NPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	Avalanche Energy Rating (Eas)	68 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	55 V	Drain Current-Max (ID)	17 A
Drain-source On Resistance-Max	0.08 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	45 W	Pulsed Drain Current-Max (IDM)	72 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON