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IRLR2908TRLPBF +BOM
Low-voltage and high-current switching device suitable for many industries
TO-252-3-
Manufacturer:
International Rectifier
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Mfr.Part #:
IRLR2908TRLPBF
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Datasheet:
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Part Life Cycle Code:
Obsolete
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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Additional Feature:
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
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EDA/CAD Models:
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Availability: 6089 PCS
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IRLR2908TRLPBF General Description
Upgrade your power management systems with the IRLR2908TRLPBF and benefit from its advanced features and robust design. Experience efficient power handling, minimal power loss, and reliable operation in a compact and environmentally friendly package. Trust in the performance and quality of this N-Channel MOSFET for your next project or application
Key Features
- Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmax
Specifications
Source Content uid | IRLR2908TRLPBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Application | SWITCHING |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
JESD-30 Code | R-PSSO-G2 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 80 V | Id - Continuous Drain Current | 39 A |
Rds On - Drain-Source Resistance | 28 mOhms | Vgs - Gate-Source Voltage | - 16 V, + 16 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 33 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 120 W | Fall Time | 55 ns |
Forward Transconductance - Min | 35 S | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 95 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 36 ns | Typical Turn-On Delay Time | 12 ns |
Width | 6.22 mm | Part # Aliases | SP001567286 |
Unit Weight | 0.011640 oz |
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In Stock: 6,089
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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