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IRLR3114ZPBF +BOM

MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC

IRLR3114ZPBF General Description

N-Channel 40 V 42A (Tc) 140W (Tc) Surface Mount D-Pak

Key Features

  • High Speed Operation
  • Low Power Consumption
  • Improved Signal Integrity
  • Increased Thermal Robustness
  • Enhanced EMI Filter Effectiveness
  • Fault Tolerant Design

Application

  • Automated assembly
  • Smart grid solutions
  • High-efficiency motors
  • Advanced lighting control

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 42A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 4.5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3810 pF @ 25 V Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount

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