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IRLR3114ZPBF +BOM
MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC
TO-252-3-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IRLR3114ZPBF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
40 V
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EDA/CAD Models:
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Availability: 9467 PCS
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IRLR3114ZPBF General Description
N-Channel 40 V 42A (Tc) 140W (Tc) Surface Mount D-Pak
Key Features
- High Speed Operation
- Low Power Consumption
- Improved Signal Integrity
- Increased Thermal Robustness
- Enhanced EMI Filter Effectiveness
- Fault Tolerant Design
Application
- Automated assembly
- Smart grid solutions
- High-efficiency motors
- Advanced lighting control
Specifications
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 42A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V | Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 3810 pF @ 25 V | Power Dissipation (Max) | 140W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
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In Stock: 9,467
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.564 | $0.56 |
200+ | $0.219 | $43.80 |
500+ | $0.211 | $105.50 |
1000+ | $0.207 | $207.00 |
The prices below are for reference only.
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