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717PBF N-channel MOSFET
TO-252-3Manufacturer:
Infineon Technologies
Mfr.Part #:
IRLR3717PBF
Datasheet:
Series:
HEXFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
20 V
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N-Channel 20 V 120A (Tc) 89W (Tc) Surface Mount TO-252AA (DPAK)
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4mOhm @ 15A, 10V | Vgs(th) (Max) @ Id | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 10 V | Power Dissipation (Max) | 89W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
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