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See Technical Specifications

IRLR7833PBF +BOM

0.0045 ohm Power FET

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLR7833PBF
Datasheet:

IRLR7833PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRLR7833PBF

IRLR7833PBF General Description

The IRLR7833PBF is a high-performance Power Field-Effect Transistor designed for demanding applications. With a rated current of 30A and a voltage rating of 30V, this N-Channel Silicon MOSFET is ideal for power management in various electronic systems. The low on-state resistance of 0.0045ohm ensures minimal power dissipation and efficient operation

Application

High Frequency Synchronous Buck Converters for Computer Processor Power

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	140A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4010 pF @ 15 V	Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount