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See Technical Specifications

IRLS3034-7PPBF +BOM

MOSFET 40V 1 N-CH HEXFET 1.4mOhms 120nC

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLS3034-7PPBF
Datasheet:

IRLS3034-7PPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Models:

Request Free CAD Models for IRLS3034-7PPBF

IRLS3034-7PPBF General Description

Housed in a TO-263 package, also known as D2PAK, the IRLS3034-7PPBF MOSFET offers excellent thermal performance, essential for high power applications where heat dissipation is a concern. Furthermore, the Pb-free lead plating of this transistor aligns with environmental regulations like RoHS, making it an environmentally friendly choice. With these features combined, the IRLS3034-7PPBF stands out as a reliable and efficient power MOSFET for various industrial applications

Key Features

Precise thermal regulation
Fast response time
Low noise emission

Application

Innovative energy systems
Intelligent power modules
Grid-tied solar inverters

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	240A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 200A, 10V	Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 4.5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10990 pF @ 40 V	Power Dissipation (Max)	380W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount