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See Technical Specifications

IRLU2905 +BOM

Silicon Power FET, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Metal-oxide Semiconductor, TO-251AA, IPAK-3

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLU2905
Datasheet:

IRLU2905 Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRLU2905

IRLU2905 General Description

Packaged in a TO-251AA through-hole package, the IRLU2905 offers convenient mounting and soldering options for easy integration into PCBs. Its compact size of 10mm x 10mm x 4mm makes it ideal for applications where space is limited. Furthermore, the wide operating temperature range of -55°C to 175°C ensures that the transistor can perform reliably in harsh environmental conditions

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	42A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	27mOhm @ 25A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 25 V	Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole