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See Technical Specifications

JANTX2N6764 +BOM

Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-204AE

Manufacturer:

Microsemi Corporation
Mfr.Part #:

JANTX2N6764
Datasheet:

JANTX2N6764 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

38A (Tc)
EDA/CAD Models:

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JANTX2N6764 General Description

The JANTX2N6764 is a powerful field-effect transistor designed for high-current applications, with a 38A I(D) rating and a maximum voltage of 100V. Featuring a low on-resistance of 0.065ohm, this N-channel FET is ideal for high-performance systems that require efficient power handling. The device is constructed with silicon and utilizes metal-oxide semiconductor technology for enhanced reliability and performance

Key Features

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	65mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	125 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-	Power Dissipation (Max)	4W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole