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JANTX2N6766 +BOM
TO-3 packaged N-channel MOSFET for high-voltage and high-current applications
TO-204AE-
Manufacturer:
Microsemi Corporation
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Mfr.Part #:
JANTX2N6766
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
200 V
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Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
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EDA/CAD Models:
Availability: 6449 PCS
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JANTX2N6766 General Description
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A JANTX2N6766 with Hermetic PackagingBenefits
Key Features
- Avalanche Energy Rating
- Dynamic dv/dt Rating
- Simple Drive Requirements
- Ease of Paralleling
- Hermetically Sealed
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 90mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - | Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
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In Stock: 6,449
Minimum Order: 1
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