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JANTX2N6770 +BOM

500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTX2N6770 with Hermetic PackagingBenefits

Manufacturer:

Microsemi Corporation
Mfr.Part #:

JANTX2N6770
Datasheet:

JANTX2N6770 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

500 V
Current - Continuous Drain (Id) @ 25°C:

12A (Tc)
EDA/CAD Models:

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JANTX2N6770 General Description

The JANTX2N6770 is a high-power field-effect transistor with a current rating of 12A and a voltage rating of 500V. It features a low on-resistance of 0.5ohm, making it suitable for use in high-power applications where efficiency is crucial. This N-channel FET is made of silicon and metal-oxide semiconductor materials, ensuring reliable performance and durability

Key Features

JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.
(See part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only).

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-	Power Dissipation (Max)	4W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole