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JS28F00AP33BFA +BOM

JS28F00AP33BFA: TSOP-56 NOR Flash

  • Manufacturer:

    Micron Technology Inc.

  • Mfr.Part #:

    JS28F00AP33BFA

  • Datasheet:

    JS28F00AP33BFA Datasheet (PDF) pdf-icon

  • Programmabe:

    Not Verified

  • Memory Type:

    Non-Volatile

  • Memory Format:

    FLASH

  • Technology:

    FLASH - NOR

JS28F00AP33BFA General Description

The JS28F00AP33BFA flash memory chip by Intel is a top-of-the-line product that offers high performance and reliability. With a capacity of 128 megabits, this chip is perfect for storing large amounts of data in electronic devices such as smartphones, digital cameras, and tablets. Its NAND flash technology ensures fast data transfer speeds and efficient storage, making it ideal for users who require quick access to their stored information

Key Features

  • Architecture
  • — Symmetrical 128-KB blocks
  • — 128 Mbit (128 blocks)
  • — 64 Mbit (64 blocks)
  • — 32 Mbit (32 blocks)
  • — Blank Check to verify an erased block
  • Performance
  • — Initial Access Speed: 75ns
  • — 25 ns 8-word Asynchronous page-mode
  • — 256-Word write buffer for x16 mode, 256-
  • Byte write buffer for x8 mode;
  • 1.41 µs per Byte Effective programming
  • System Voltage
  • — VCC = 2.7 V to 3.6 V
  • — VCCQ = 2.7 V to 3.6 V
  • Packaging
  • — 56-Lead TSOP
  • — 64-Ball Easy BGA package
  • Security
  • — Enhanced security options for code
  • protection
  • — Absolute protection with VPEN = Vss
  • — Individual block locking
  • — Block erase/program lockout during power
  • transitions
  • — Password Access feature
  • — One-Time Programmable Register:
  • 64 OTP bits, programmed with unique
  • information by Numonyx
  • 64 OTP bits, available for customer
  • programming
  • Software
  • — Program and erase suspend support
  • — Numonyx® Flash Data Integrator (FDI)
  • — Common Flash Interface (CFI) Compatible
  • — Scalable Command Set
  • Quality and Reliability
  • — Operating temperature:
  • -40 °C to +85 °C
  • — 100K Minimum erase cycles per block
  • — 65 nm Flash Technology
  • — JESD47E Compliant

Specifications

Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Technology FLASH - NOR
Memory Size 1Gbit Memory Organization 64M x 16
Memory Interface Parallel Clock Frequency 40 MHz
Write Cycle Time - Word, Page 105ns Access Time 105 ns
Voltage - Supply 2.3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number JS28F00AP33

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