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MMDT3904-7 Image

MMDT3904-7 Image

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See Technical Specifications

MMDT3904-7 +BOM

BJT transistors capable of handling up to 40V and 200mW of power

Manufacturer:

Diodes Incorporated
Mfr.Part #:

MMDT3904-7
Datasheet:

MMDT3904-7 Datasheet (PDF)
Transistor Type:

2 NPN (Dual)
Current - Collector (Ic) (Max):

200mA
Voltage - Collector Emitter Breakdown (Max):

40V
Vce Saturation (Max) @ Ib, Ic:

300mV @ 5mA, 50mA
EDA/CAD Models:

Request Free CAD Models for MMDT3904-7

MMDT3904-7 General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 300MHz 200mW Surface Mount SOT-363

Key Features

Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package

Specifications

Transistor Type	2 NPN (Dual)	Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Power - Max	200mW	Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	MMDT3904

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MMDT3904-7

Diodes Incorporated

Availability: 8,571 PCS

6-TSSOP,SC-88,SOT-363

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