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See Technical Specifications

MMDT5401-7-F +BOM

The MMDT5401-7-F transistor is suitable for general purpose applications

Manufacturer:

Diodes Incorporated
Mfr.Part #:

MMDT5401-7-F
Datasheet:

MMDT5401-7-F Datasheet (PDF)
Transistor Type:

2 PNP (Dual)
Current - Collector (Ic) (Max):

200mA
Voltage - Collector Emitter Breakdown (Max):

150V
Vce Saturation (Max) @ Ib, Ic:

500mV @ 5mA, 50mA
EDA/CAD Models:

Request Free CAD Models for MMDT5401-7-F

MMDT5401-7-F General Description

The MMDT5401-7-F is a versatile PNP/PNP transistor housed in a SOT363 package, designed for small signal applications. With a Collector Emitter Voltage V(br)ceo of -150V and a maximum power dissipation of 200mW, this transistor can handle DC Collector Currents of up to -200mA. Its DC Current Gain hFE is specified at 60, ensuring reliable performance across a wide temperature range from -55°C to +150°C

Key Features

Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate Datasheet (MMDT5401Q)

Application

SWITCHING

Specifications

Transistor Type	2 PNP (Dual)	Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Power - Max	200mW	Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	MMDT5401