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NE325S01 +BOM

RF Small Signal Field-Effect Transistor

  • Manufacturer:

    nec

  • Mfr.Part #:

    NE325S01

  • Datasheet:

    NE325S01 Datasheet (PDF) pdf-icon

  • Transistor Type:

    HFET

  • Technology:

    GaAs

  • Operating Frequency:

    12 GHz

  • Gain:

    12.5 dB

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • Super Low Noise Figure & High Associated Gain
  • NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
  • Gate Length: Lg ≤ 0.20 µm
  • Gate Width : Wg = 200 µm

Specifications

Product Category RF JFET Transistors Transistor Type HFET
Technology GaAs Operating Frequency 12 GHz
Gain 12.5 dB Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 4 V Vgs - Gate-Source Breakdown Voltage - 3 V
Id - Continuous Drain Current 90 mA Maximum Operating Temperature + 125 C
Pd - Power Dissipation 165 mW Mounting Style SMD/SMT
Forward Transconductance - Min 60 mS NF - Noise Figure 0.45 dB
Product RF JFET Product Type RF JFET Transistors
Subcategory Transistors Type GaAs HFET

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