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NE662M04 +BOM

Versatile pin SOT-package solution for RF and microwave systems development

Key Features

  • HIGH GAIN BANDWIDTH: fT = 25 GHz
  • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
  • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
  • NEW LOW PROFILE M04 PACKAGE:
  • SOT-343 footprint, with a height of just 0.59 mm
  • Flat Lead Style for better RF performance

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar
Technology Si Transistor Polarity NPN
Operating Frequency 25000 MHz (Typ) Emitter- Base Voltage VEBO 1.5 V
Continuous Collector Current 35 mA Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Configuration Single
Collector- Base Voltage VCBO 15 V DC Current Gain hFE Max 50 at 5 mA at 2 V
Pd - Power Dissipation 115 mW Product Type RF Bipolar Transistors
Subcategory Transistors Type RF Bipolar Small Signal

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