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See Technical Specifications

NE5520379A +BOM

Advanced device technology for reliable high-frequency signal processing and transmissio

Manufacturer:

NEC
Mfr.Part #:

NE5520379A
Datasheet:

NE5520379A Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

1.5 A
Vds - Drain-Source Breakdown Voltage:

15 V

NE5520379A General Description

The status of product NE5520379A is listed as discontinued, indicating that it is no longer in production or available for purchase. As such, we are unable to provide ongoing support or services for this product. Customers are advised to consider upgrading to newer models or seeking out similar products from alternative sources

Key Features

LOW COST PLASTIC SURFACE MOUNT PACKAGE
HIGH OUTPUT POWER: +35.5 dBm TYP
HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz
SINGLE SUPPLY: 2.8 to 6.0 V
CLASS AB OPERATION
SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	1.5 A
Vds - Drain-Source Breakdown Voltage	15 V	Operating Frequency	915 MHz
Gain	16 dB	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 125 C	Mounting Style	SMD/SMT
Channel Mode	Depletion	Configuration	Single
Forward Transconductance - Min	2.5 S	Pd - Power Dissipation	20 W
Product Type	RF MOSFET Transistors	Subcategory	MOSFETs
Transistor Type	LDMOS FET	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	5 V