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NE85619-T1-A +BOM

Perfect for small-signal switching and amplifying signal

NE85619-T1-A General Description

RF Transistor NPN 12V 100mA 4.5GHz 125mW Surface Mount SOT-523

Key Features

  • HIGH GAIN BANDWIDTH PRODUCT:
  • fT= 7 GHz
  • LOW NOISE FIGURE:
  • 1.1 dB at 1 GHz
  • HIGH COLLECTOR CURRENT:100 mA
  • HIGH RELIABILITY METALLIZATION
  • LOW COST

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar
Technology Si Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 12 V Emitter- Base Voltage VEBO 3 V
Continuous Collector Current 100 mA Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Configuration Single
Mounting Style SMD/SMT DC Current Gain hFE Max 160
Gain Bandwidth Product fT 4.5 GHz Height 0.75 mm
Length 1.6 mm Pd - Power Dissipation 100 mW
Product Type RF Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Type RF Bipolar Small Signal
Width 0.8 mm Part # Aliases 2SC5006-T1-A

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