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NESG2021M16-T3-A +BOM

Bipolar Transistors - BJT

NESG2021M16-T3-A General Description

RF Transistor NPN 5V 35mA 25GHz 175mW Surface Mount M16, 1208

Renesas Technology Corp Inventory
Renesas Technology Corp Original Stock
Renesas Technology Corp Inventory

Specifications

Product Category: RF Bipolar Transistors Transistor Type: Bipolar
Technology: SiGe Transistor Polarity: NPN
Operating Frequency: 25 GHz Emitter- Base Voltage VEBO: 1.5 V
Continuous Collector Current: 35 mA Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C Configuration: Single
Mounting Style: SMD/SMT Packaging: MouseReel
Collector- Base Voltage VCBO: 13 V DC Current Gain hFE Max: 130 at 5 mA at 2 V
Pd - Power Dissipation: 175 mW Product Type: RF Bipolar Transistors
Factory Pack Quantity: 10000 Subcategory: Transistors
Type: RF Silicon Germanium

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