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NE72218 +BOM

RF Bipolar Transistors

Key Features

  • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz
  • Gate length : Lg = 0.8 µm
  • Gate width : Wg = 400 µm
  • 4-pin super minimold package
  • Tape & reel packaging only available

Specifications

Product Category RF Bipolar Transistors Transistor Type MESFET
Technology GaAs Transistor Polarity N-Channel
Operating Frequency 12 GHz Maximum Operating Temperature + 125 C
Mounting Style SMD/SMT Pd - Power Dissipation 250 mW
Product RF JFET Product Type RF Bipolar Transistors
Factory Pack Quantity 50 Subcategory Transistors
Type GaAs MESFET

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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