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See Technical Specifications

NE3510M04-T2-A +BOM

RF Mosfet 2 V 15 mA 4GHz 16dB M04

Manufacturer:

CEL
Mfr.Part #:

NE3510M04-T2-A
Datasheet:

NE3510M04-T2-A Datasheet (PDF)
Transistor Type:

HFET
Technology:

GaAs
Operating Frequency:

4 GHz
Gain:

16 dB

NE3510M04-T2-A General Description

The NE3510M04-T2-A is a high-performance Trans FET N-CH with a voltage rating of 4V and a current rating of 97mA. This 4-Pin Thin-Type Super Mini-Mold package is designed for applications where space is limited and high efficiency is required

Specifications

Product Category	RF JFET Transistors	Transistor Type	HFET
Technology	GaAs	Operating Frequency	4 GHz
Gain	16 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	4 V	Vgs - Gate-Source Breakdown Voltage	- 3 V
Id - Continuous Drain Current	97 mA	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	125 mW	Mounting Style	SMD/SMT
Forward Transconductance - Min	70 mS	NF - Noise Figure	0.45 dB
P1dB - Compression Point	11 dBm	Product	RF JFET Transistors
Product Type	RF JFET Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Type	GaAs HFET