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NE334S01 +BOM

N-Channel Gallium Arsenide Hetero-junction FET

  • Manufacturer:

    nec

  • Mfr.Part #:

    NE334S01

  • Datasheet:

    NE334S01 Datasheet (PDF) pdf-icon

  • Transistor Type:

    HFET

  • Technology:

    GaAs

  • Operating Frequency:

    4 GHz

  • Gain:

    16 dB

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • VERY LOW NOISE FIGURE:
  • 0.25 dB TYP at 4 GHz
  • HIGH ASSOCIATED GAIN:
  • 16.0 dB TYP at 4 GHz
  • GATE WIDTH: 280 µm
  • TAPE & REEL PACKAGING OPTION AVAILABLE
  • LOW COST PLASTIC PACKAGE

Specifications

Product Category RF JFET Transistors Transistor Type HFET
Technology GaAs Operating Frequency 4 GHz
Gain 16 dB Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 4 V Vgs - Gate-Source Breakdown Voltage - 3 V
Id - Continuous Drain Current 150 mA Maximum Operating Temperature + 125 C
Pd - Power Dissipation 300 mW Mounting Style SMD/SMT
Forward Transconductance - Min 85 mS NF - Noise Figure 0.25 dB
Product RF JFET Product Type RF JFET Transistors
Subcategory Transistors Type GaAs HFET

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