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See Technical Specifications

NE46100 +BOM

Robust and durable construction for long-lasting operati

Manufacturer:

nec
Mfr.Part #:

NE46100
Datasheet:

NE46100 Datasheet (PDF)
Technology:

Si
Minimum Operating Temperature:

- 65 C
Maximum Operating Temperature:

+ 200 C
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for NE46100

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NE46100 General Description

DESCRIPTIONNECs NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NECs titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.FEATURES• HIGH DYNAMIC RANGE• LOW IM DISTORTION: -40 dBc• HIGH OUTPUT POWER : 27.5 dBm at TYP• LOW NOISE: 1.5 dB TYP at 500 MHz• LOW COST

Specifications

Product Category	RF Bipolar Transistors	Technology	Si
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Configuration	Single	Pd - Power Dissipation	3.75 W
Product Type	RF Bipolar Transistors	Subcategory	Transistors