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See Technical Specifications

NE68833 +BOM

NE68833 Transistor is designed for low current applications

Manufacturer:

nec
Mfr.Part #:

NE68833
Datasheet:

NE68833 Datasheet (PDF)
Transistor Type:

Bipolar
Technology:

Si
Transistor Polarity:

NPN
Operating Frequency:

8.5 GHz
EDA/CAD Models:

Request Free CAD Models for NE68833

Email: [email protected]

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NE68833 General Description

DESCRIPTIONThe NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount package styles, and in chip form.FEATURES• LOW PHASE NOISE DISTORTION• LOW NOISE: 1.5 dB at 2.0 GHz• LOW VOLTAGE OPERATION• LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA• AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES• ALSO AVAILABLE IN CHIP FORM

Specifications

Product Category	RF Bipolar Transistors	Transistor Type	Bipolar
Technology	Si	Transistor Polarity	NPN
Operating Frequency	8.5 GHz	Emitter- Base Voltage VEBO	2 V
Continuous Collector Current	100 mA	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Configuration	Single
Collector- Base Voltage VCBO	9 V	DC Current Gain hFE Max	80 at 3 mA at 1 V
Pd - Power Dissipation	150 mW	Product Type	RF Bipolar Transistors
Subcategory	Transistors	Type	RF Bipolar Small Signal