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See Technical Specifications

NSVJ5908DSG5T1G +BOM

N-Channel JFET, -15 V, 10 to 32 mA, 35 mS, Dual

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NSVJ5908DSG5T1G
Datasheet:

NSVJ5908DSG5T1G Datasheet (PDF)
Case Outline:

419AP
MSL Temp (°C):

260
Container Type:

REEL
Technology:

Si

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NSVJ5908DSG5T1G General Description

The NSVJ5908DSG5T1G is an AEC-Q101 qualified JFET that is ideal for automotive applications. With high gain performance and PPAP capability, this JFET is ready to meet the challenges of compact and efficient automotive designs. Engineers can trust in the reliability and quality of this JFET, knowing that it has been specifically designed to excel in automotive applications

Key Features

Composite type with 2 JFET contained
Large forward transfer admittance | yfs | and low noise figure NF
The NSVJ5908DSG5 is formed with two chips, being equivalent to the NSVJ3557SA3, placed in MCPH5 package.
Pb-Free, Halogen Free and RoHS compliance
AEC-Q101 qualified and PPAP capable
High power dissipation

Application

AM Tuner RF Amplifier
Low Noise Amplifier

Specifications

Status	Active	Case Outline	419AP
MSL Temp (°C)	260	Container Type	REEL
Product Category	JFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Configuration	Dual	Vds - Drain-Source Breakdown Voltage	15 V
Vgs - Gate-Source Breakdown Voltage	- 15 V	Gate-Source Cutoff Voltage	- 700 mV
Drain-Source Current at Vgs=0	32 mA	Id - Continuous Drain Current	50 mA
Pd - Power Dissipation	300 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Qualification	AEC-Q101
Forward Transconductance - Min	24 mS	Product Type	JFETs
Factory Pack Quantity	3000	Subcategory	Transistors