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See Technical Specifications

NST45011MW6T1G +BOM

General Purpose Transistor, Dual NPN, Matched

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NST45011MW6T1G
Datasheet:

NST45011MW6T1G Datasheet (PDF)
Transistor Type:

2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

45V
Vce Saturation (Max) @ Ib, Ic:

600mV @ 5mA, 100mA
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NST45011MW6T1G General Description

The NXP Semiconductors NST45011MW6T1G is a game-changer for broadband applications in the 1.5 to 6 GHz frequency range. This high-power RF transistor sets the bar with its 11W power output and 13 dB gain. Operating at a supply voltage of 28V, it achieves an impressive efficiency of up to 65%, making it the go-to choice for reliable and high-performance RF amplification

Key Features

Gain matched to 10%, Typical 2%
Vbe matched to 2.0 mV typical 0.5 mV
AEC-Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Application

Navigation systems
Drone surveillance
Wireless communication

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays	Series	-
Transistor Type	2 NPN (Dual) Matched Pair	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	45V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	380mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NST45011	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	NPN
Configuration	Dual	Collector- Emitter Voltage VCEO Max	45 V
Collector- Base Voltage VCBO	50 V	Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	600 mV	Maximum DC Collector Current	100 mA
Pd - Power Dissipation	380 mW	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	150	Height	0.9 mm
Length	2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Width	1.25 mm
Unit Weight	0.000212 oz