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NVJD5121NT1G +BOM

Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVJD5121NT1G
Datasheet:

NVJD5121NT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
Drain To Source Voltage (Vdss):

60V
EDA/CAD Models:

Request Free CAD Models for NVJD5121NT1G

NVJD5121NT1G General Description

The NVJD5121NT1G is a top-of-the-line Automotive Power MOSFET that caters to low power applications. Boasting a 60V voltage rating, 295mA current rating, and 1.6 Ω on-state resistance, this dual N-Channel SC−88 MOSFET guarantees efficient power delivery. Its ESD protection and logic level compatibility further enhance its suitability for a wide range of automotive applications. What's more, the MOSFET is AEC-Q101 Qualified and PPAP capable, attesting to its reliability and performance in demanding automotive environments. Compact yet powerful, the NVJD5121NT1G is the go-to choice for automotive designers seeking to achieve optimal efficiency and performance

Key Features

High output drive capability: ±20 mA max
Low output impedance: 100 ohms typ
Compact package size: SOT-23

Application

Robust automotive solutions
Automated manufacturing processes
Sleek electronic gadgets

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	Automotive, AEC-Q101
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	-	Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	295mA	Rds On (Max) @ Id, Vgs	1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 20V	Power - Max	250mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NVJD5121